Title :
A comparative study of the characteristics of GaN films grown by MOCVD
Author :
Yam, F.K. ; Hassan, Z. ; Jamal, Z. ; Aziz, A. Abdul ; Kordesch, M.E.
Author_Institution :
Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia
Abstract :
The structural and surface morphology of GaN films grown on (0001) plane sapphire substrate by low pressure metalorganic chemical vapour deposition (MOCVD) were investigated by using scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), and X-ray diffraction (XRD). The influence of the growth parameters on the film quality is investigated and compared. Based on the micrographs and measurements obtained, the effect of the different growth conditions on the properties of GaN films are discussed.
Keywords :
III-V semiconductors; MOCVD coatings; X-ray chemical analysis; X-ray diffraction; gallium compounds; scanning electron microscopy; semiconductor epitaxial layers; surface morphology; wide band gap semiconductors; Al2O3; EDS; GaN; GaN films properties; MOCVD; SEM; X-ray diffraction; XRD; energy-dispersive spectroscopy; low pressure metalorganic chemical vapour deposition; micrographs; sapphire substrate; scanning electron microscopy; surface morphology; Chemical vapor deposition; Gallium nitride; Hydrogen; Inductors; MOCVD; Photonic band gap; Physics; Scanning electron microscopy; Substrates; Temperature;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217841
