DocumentCode :
1807817
Title :
Holistic design of 8-way combining transformers in SiGe technology for use in millimetre-wave power amplifiers
Author :
Thian, Mury ; Tiebout, Marc ; Fusco, Vincent F.
Author_Institution :
Infineon Technol. AG, Villach, Austria
fYear :
2013
fDate :
21-23 Jan. 2013
Firstpage :
72
Lastpage :
74
Abstract :
This paper presents the design of a novel 8-way power-combining transformer for use in mm-wave power amplifier (PA). The combiner exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. A complete circuit comprised of a power splitter, two-stage cascode PA array, a power combiner and input/output matching elements was designed and realized in SiGe technology. Measured gain of at least 16.8 dB was obtained from 76.4 GHz to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm OP-1dB and 14 dBm saturated output power when operated from a 3.2 V DC supply voltage at 78 GHz.
Keywords :
Ge-Si alloys; millimetre wave power amplifiers; power combiners; transformers; 8-way power-combining transformer holistic design; SiGe; frequency 76.4 GHz to 83.5 GHz; input-output matching elements; loss 1.25 dB; millimetre-wave power amplifiers; mm-wave power amplifier; power splitter; two-stage cascode PA array; voltage 3.2 V; Bandwidth; Gain; Gain measurement; Power amplifiers; Power generation; Semiconductor device measurement; Silicon germanium; Cascode; E-band; hetero-junction bipolar transistor (HBT); integrated circuit (IC); mm-wave; power amplifier (PA); power combiner; silicon germanium (SiGe); transformer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
Type :
conf
DOI :
10.1109/SiRF.2013.6489436
Filename :
6489436
Link To Document :
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