DocumentCode
1807919
Title
Field programmable SONOS ESD protection design
Author
Liu, J. ; Shi, Z.T. ; Wang, X. ; Zhao, H. ; Wang, L. ; Zhang, C. ; Dong, Z. ; Lin, L. ; Wang, A. ; Cheng, Y. ; Zhao, B.
Author_Institution
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
fYear
2012
fDate
9-12 Sept. 2012
Firstpage
1
Lastpage
4
Abstract
This paper reports the first SONOS-based field-programmable ESD protection concept and structure. Prototype in 130nm CMOS demonstrates wide ESD triggering tuning range of ~2V and ultra low leakage of 1.2pA. It enables post-Si on-chip/in-system ESD design programmability for complex ICs.
Keywords
CMOS integrated circuits; electrostatic discharge; integrated circuit design; silicon compounds; CMOS; ESD triggering tuning range; SONOS-based field-programmable ESD protection concept; SONOS-based field-programmable ESD protection structure; complex IC; field programmable SONOS ESD protection design; in-system ESD design programmability; on-chip ESD design programmability; ultra low leakage; Electrostatic discharges; Integrated circuits; Logic gates; Programming; SONOS devices; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location
San Jose, CA
ISSN
0886-5930
Print_ISBN
978-1-4673-1555-5
Electronic_ISBN
0886-5930
Type
conf
DOI
10.1109/CICC.2012.6330711
Filename
6330711
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