Fringing gate capacitance model for triple-gate FinFET

Author

Salas, Sergio ; Tinoco, J.C. ; Martinez-Lopez, A.G. ; Alvarado, J. ; Raskin, J.

Author_Institution

Centro de Investig. en Micro y Nanotecnologia, Univ. Veracruzana, Veracruz, Mexico

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

90

Lastpage

92

Abstract

In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on three-dimensional numerical simulations, is presented. The model takes into account the source/drain electrode and contact areas. It includes 5 capacitance components that describe the different fringing electrical couplings that exist inside the FinFET structure. The semi-analytical model accurately calculates the total extrinsic gate capacitance as function of the main geometrical parameters of Triple-Gate FinFET.

Keywords

MOSFET; finite element analysis; semiconductor device models; 3D numerical simulation; contact areas; fringing gate capacitance model; semianalytical extrinsic gate capacitance model; source-drain electrode; triple-gate FinFET; Capacitance; Capacitors; Electrodes; FinFETs; Fitting; Logic gates; Numerical models; Extrinsic Capacitance; FinFETs; Fringing Electric Field; Fringing Gate Capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489442

Filename

6489442