Title :
Fringing gate capacitance model for triple-gate FinFET
Author :
Salas, Sergio ; Tinoco, J.C. ; Martinez-Lopez, A.G. ; Alvarado, J. ; Raskin, J.
Author_Institution :
Centro de Investig. en Micro y Nanotecnologia, Univ. Veracruzana, Veracruz, Mexico
Abstract :
In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on three-dimensional numerical simulations, is presented. The model takes into account the source/drain electrode and contact areas. It includes 5 capacitance components that describe the different fringing electrical couplings that exist inside the FinFET structure. The semi-analytical model accurately calculates the total extrinsic gate capacitance as function of the main geometrical parameters of Triple-Gate FinFET.
Keywords :
MOSFET; finite element analysis; semiconductor device models; 3D numerical simulation; contact areas; fringing gate capacitance model; semianalytical extrinsic gate capacitance model; source-drain electrode; triple-gate FinFET; Capacitance; Capacitors; Electrodes; FinFETs; Fitting; Logic gates; Numerical models; Extrinsic Capacitance; FinFETs; Fringing Electric Field; Fringing Gate Capacitance;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489442
