DocumentCode :
1808036
Title :
Multi-gigabit 60 GHz OOK front-end in 90 nm CMOS
Author :
Hamidian, Amin ; Malignaggi, Andrea ; Shu, Ran ; Kamal, A.M. ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
fYear :
2013
fDate :
21-23 Jan. 2013
Firstpage :
96
Lastpage :
98
Abstract :
In this work an on-off shift keying transmitter front-end for 60 GHz wireless communication is presented. To enhance the transmitter performance, a novel modulator topology is implemented. Designed and fabricated in 90 nm CMOS, the transmitter occupies 0.38 mm2 and provides 8 dBm output power with 36 mW DC power consumption. The transmitter measurement in a complete 60 GHz wireless set-up showed more than 6 Gbit/s data rate over 4 m distance.
Keywords :
CMOS integrated circuits; amplitude shift keying; low-power electronics; modulators; radio transmitters; CMOS integrated circuit; DC power consumption; distance 4 m; frequency 60 GHz; modulator topology; multigigabit OOK front-end; on-off shift keying transmitter front-end; power 36 mW; size 90 nm; wireless communication; CMOS integrated circuits; Gain; Modulation; Power generation; Transistors; Transmitters; Wireless communication; 60 GHz; 90 nm LP CMOS technology; High data rate wireless applications; OOK; Transmitter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
Type :
conf
DOI :
10.1109/SiRF.2013.6489444
Filename :
6489444
Link To Document :
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