DocumentCode
1808122
Title
Improving metal step coverage with reflow
Author
Sabli, Sharaifah Kamariah Wan ; Zain, Azlina Mohd ; Hashim, Uda ; Ayub, Ramzan Mat ; Sauli, Zaliman
Author_Institution
MIMOS Semicond., Kuala Lumpur, Malaysia
fYear
2002
fDate
19-21 Dec. 2002
Firstpage
428
Lastpage
432
Abstract
New dry etching procedure is utilized and additional reflow process step is introduced into standard contact dry etching process. Physical cross-sectional FESEM pictures are compared and the metal step coverage of the sidewall and bottom of contact are measured. Experimental results indicate that increasing the metal thickness does not help to improve the metal step coverage for both sidewall and bottom of the contact. However, metal step coverage is improved with a new dry etching procedure and further improved with additional reflow process step after contact etch using furnace. This additional reflow step improves the metal step coverage by rounding off the sharp corners on the contact sidewalls without contact excessive CD loss and degrading device performance. This approach is extremely useful for deep contact formation.
Keywords
MOSFET; field emission electron microscopy; scanning electron microscopy; sputter etching; contact sidewalls; deep contact formation; dry etching; field emission scanning electron microscopy; metal step coverage; reflow process; Anisotropic magnetoresistance; CMOS process; Dielectrics; Dry etching; Furnaces; MIMO; Resists; Silicon; Sputtering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN
0-7803-7578-5
Type
conf
DOI
10.1109/SMELEC.2002.1217858
Filename
1217858
Link To Document