DocumentCode :
1808154
Title :
Industrialization of mmWave SiGe technologies: Status, future requirements and challenges
Author :
Lachner, Rudolf
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2013
fDate :
21-23 Jan. 2013
Firstpage :
105
Lastpage :
107
Abstract :
An overview of Infineon´s Silicon-Germanium millimeter wave technology will be given. The current production process B7HF200 will be briefly described and recent performance enhancements achieved in the European research project DOTFIVE presented. Examples of successful commercial SiGe mmwave products will be given. Driven by the requirements of automotive radar applications in the 76-81 GHz range, directions and challenges of future process developments will be outlined.
Keywords :
Ge-Si alloys; millimetre wave radar; road vehicle radar; B7HF200 current production process; DOTFIVE; European research project; Infineon silicon-germanium millimeter wave technology; SiGe; automotive radar applications; commercial mmwave products; frequency 76 GHz to 81 GHz; Automotive engineering; Europe; Heterojunction bipolar transistors; Millimeter wave radar; Production; Silicon germanium; Automotive Radar; DOTFIVE; DOTSEVEN; DPSA-E/B Structure; Silicon-Germanium HBT; millimeter wave applications;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
Type :
conf
DOI :
10.1109/SiRF.2013.6489447
Filename :
6489447
Link To Document :
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