A K-band SiGe bipolar VCO with transformer-coupled varactor for backhaul links

Author

Padovan, Fabio ; Tiebout, Marc ; Mertens, K. ; Bevilacqua, Andrea ; Neviani, Andrea

Author_Institution

DEI, Univ. of Padova, Padua, Italy

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

108

Lastpage

110

Abstract

A K-band SiGe bipolar VCO with a transformer-coupled varactor operating from 18.1 to 20.5 GHz is presented. The oscillator features a phase noise as low as -135.7 dBc/Hz at 10 MHz offset from the 19.5 GHz carrier while drawing 7 rnA from the 3.3 V supply. The VCO shows a state-of-the-art FOM of -188 dBc/Hz and an excellent FOM_T of -191 dBc/Hz. The oscillator is tailored to the communication systems operating in the lower portion of the E-band. It is intended to be followed by a frequency multiplier by four, reported elsewhere.

Keywords

Ge-Si alloys; frequency multipliers; microwave oscillators; phase noise; varactors; voltage-controlled oscillators; SiGe; backhaul links; bipolar VCO; current 7 mA; frequency 18.1 GHz to 20.5 GHz; frequency multiplier; microwave oscillators; phase noise; transformer-coupled varactor; voltage 3.3 V; voltage-controlled oscillators; Frequency measurement; Heterojunction bipolar transistors; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489448

Filename

6489448