Title :
A K-band SiGe bipolar VCO with transformer-coupled varactor for backhaul links
Author :
Padovan, Fabio ; Tiebout, Marc ; Mertens, K. ; Bevilacqua, Andrea ; Neviani, Andrea
Author_Institution :
DEI, Univ. of Padova, Padua, Italy
Abstract :
A K-band SiGe bipolar VCO with a transformer-coupled varactor operating from 18.1 to 20.5 GHz is presented. The oscillator features a phase noise as low as -135.7 dBc/Hz at 10 MHz offset from the 19.5 GHz carrier while drawing 7 rnA from the 3.3 V supply. The VCO shows a state-of-the-art FOM of -188 dBc/Hz and an excellent FOMT of -191 dBc/Hz. The oscillator is tailored to the communication systems operating in the lower portion of the E-band. It is intended to be followed by a frequency multiplier by four, reported elsewhere.
Keywords :
Ge-Si alloys; frequency multipliers; microwave oscillators; phase noise; varactors; voltage-controlled oscillators; SiGe; backhaul links; bipolar VCO; current 7 mA; frequency 18.1 GHz to 20.5 GHz; frequency multiplier; microwave oscillators; phase noise; transformer-coupled varactor; voltage 3.3 V; voltage-controlled oscillators; Frequency measurement; Heterojunction bipolar transistors; Phase noise; Silicon germanium; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489448
