DocumentCode
1808253
Title
An 18–40 GHz ultra broadband low noise amplifier MMIC
Author
Yang, Guang ; Guo, Yunchuan ; Xu, Ruimin
Author_Institution
Univ. of Electron. Sci. & Technol. of China, Chengdu
Volume
2
fYear
2008
fDate
21-24 April 2008
Firstpage
865
Lastpage
867
Abstract
A monolithic 18-40 GHz low noise amplifier (LNA) has been developed using 0.25 mum gate length GaAs/InGaAs/AlGaAs pseudomorphic HEMT technology. This MMIC amplifier achieved 1.4-2.3 dB noise figure with more than 10 dB associate gain from 18-40 GHz. This result rivals some 0.15 mum GaAs PHEMT process.
Keywords
MMIC; gallium compounds; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; wideband amplifiers; GaAs-InGaAs-AlGaAs; HEMT technology; MMIC amplifier; frequency 18 GHz to 40 GHz; monolithic microwave integrated circuit; size 0.25 micron; ultrabroadband low noise amplifier; Broadband amplifiers; Circuit noise; Circuit synthesis; Frequency; Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; PHEMTs; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-1879-4
Electronic_ISBN
978-1-4244-1880-0
Type
conf
DOI
10.1109/ICMMT.2008.4540539
Filename
4540539
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