Title :
An 18–40 GHz ultra broadband low noise amplifier MMIC
Author :
Yang, Guang ; Guo, Yunchuan ; Xu, Ruimin
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
A monolithic 18-40 GHz low noise amplifier (LNA) has been developed using 0.25 mum gate length GaAs/InGaAs/AlGaAs pseudomorphic HEMT technology. This MMIC amplifier achieved 1.4-2.3 dB noise figure with more than 10 dB associate gain from 18-40 GHz. This result rivals some 0.15 mum GaAs PHEMT process.
Keywords :
MMIC; gallium compounds; high electron mobility transistors; indium compounds; low noise amplifiers; millimetre wave amplifiers; wideband amplifiers; GaAs-InGaAs-AlGaAs; HEMT technology; MMIC amplifier; frequency 18 GHz to 40 GHz; monolithic microwave integrated circuit; size 0.25 micron; ultrabroadband low noise amplifier; Broadband amplifiers; Circuit noise; Circuit synthesis; Frequency; Gallium arsenide; Low-noise amplifiers; MMICs; Noise figure; PHEMTs; Semiconductor device noise;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540539
