A 36–49 GHz injection-locked frequency divider with transformer-based dual-path injection

Author

Shu, Ran ; Subramanian, Venkatachalam ; Hamidian, Amin ; Malignaggi, Andrea ; Ali, Mohammed K. ; Boeck, Georg

Author_Institution

Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

114

Lastpage

116

Abstract

In this work, a Q-band injection-locked frequency divider (ILFD) has been implemented in 90 nm CMOS technology. An ILFD topology of transformer-based dual-path injection was proposed to maximize the power gain of the injection path and improve the locking range of the ILFD. On-wafer measurements showed that with 0 dBm input power, the proposed ILFD achieves a 30.5 % locking range from 36 GHz to 49 GHz and consumes only 2.64 mW with a 1.2 V power supply.

Keywords

field effect MIMIC; frequency dividers; millimetre wave measurement; network topology; CMOS technology; Q-band ILFD topology; Q-band injection-locked frequency divider topology; frequency 36 GHz to 49 GHz; on-wafer measurements; power 3.64 mW; size 90 nm; transformer-based dual-path injection; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Current measurement; Frequency conversion; Impedance matching; Topology; Transistors; CMOS; Q-band; injection-locked frequency divider; transformer-based dual-path injection;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489450

Filename

6489450