Title :
Fundamentals and current status of steep-slope tunnel field-effect transistors
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
The tunnel field-effect transistor (TFET) utilizes a metal-oxide-semiconductor MOS structure to control the Zener tunneling current in a p+n+ junction. Current understanding and status in the development of TFETs with steep inverse-subthreshold-slope is reviewed.
Keywords :
MOS integrated circuits; field effect transistors; p-n junctions; tunnel transistors; TFET; Zener tunneling current; metal-oxide-semiconductor MOS structure; p+n+ junction; steep inverse-subthreshold-slope; tunnel field-effect transistor; FETs; Heterojunctions; Logic gates; MOSFET circuits; Tunneling;
Conference_Titel :
ESSCIRC (ESSCIRC), 2011 Proceedings of the
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0703-2
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2011.6044914
