• DocumentCode
    1808423
  • Title

    A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology

  • Author

    Laemmle, Benjamin ; Schmalz, K. ; Borngraeber, J. ; Scheytt, J. Christoph ; Weigel, Robert ; Koelpin, Alexander ; Kissinger, Dietmar

  • Author_Institution
    Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
  • fYear
    2013
  • fDate
    21-23 Jan. 2013
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    A fully integrated six-port receiver front-end at 120 GHz center frequency including a low-noise-amplifier, a passive six-port network, a VCO, and four direct converters is presented in this publication. The overall architecture of the designed six-port receiver is analyzed and fundamental theory of the receiver given. The design of the six-port building blocks is described and measurement results are presented. All circuits have been fabricated in a 0.13μm 300-GHz fT SiGe BiCMOS technology. The fully integrated receiver consumes 85.9 rnA from a 3.3-V supply and occupies an area of 1.03mm2. The receiver includes a VCO with a center frequency of 117.15 GHz, a tuning range of 2.7 GHz, and a phase noise of -86 dBc/Hz at 1 MHz offset. The LNA shows a gain of 12 dB, a 3-dB bandwidth of 30 GHz at a power consumption of 9.2 rnA. The six-port core has a conversion gain of 3.6 dB, a P1dB of -12 dBm, and a power consumption of 28 rnA. The overall receiver shows a conversion gain of 2.4 dB at 120 GHz and P1dB of -17 dBm.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; UHF oscillators; convertors; field effect MIMIC; integrated circuit design; integrated circuit measurement; millimetre wave amplifiers; millimetre wave oscillators; millimetre wave receivers; passive networks; phase noise; submillimetre wave integrated circuits; voltage-controlled oscillators; BiCMOS technology; LNA; SiGe; VCO; current 28 mA; current 85.9 mA; current 9.2 mA; four direct converter; frequency 117.15 GHz; frequency 120 GHz; frequency 2.7 GHz; frequency 30 GHz; frequency 300 GHz; fully integrated six-port receiver front-end; gain 12 dB; gain 2.4 dB; gain 3 dB; gain 3.6 dB; low-noise-amplifier; passive six-port core network; phase noise; power consumption; size 130 nm; voltage 3.3 V; Frequency conversion; Gain; Radio frequency; Receivers; Silicon germanium; Tuning; Voltage-controlled oscillators; SiGe BiC-MOS; communication receiver; millimeter-wave; six-port;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4673-1552-4
  • Electronic_ISBN
    978-1-4673-1551-7
  • Type

    conf

  • DOI
    10.1109/SiRF.2013.6489455
  • Filename
    6489455