Title :
A SiGe HBT power amplifier with integrated mode control switches for LTE applications
Author :
Jonghun Jung ; Geunyong Lee ; Jong-In Song
Author_Institution :
Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
A SiGe HBT mode switching power amplifier (PA) for 835MHz long-term-evolution (LTE) applications has been realized in a BiCMOS technology. The PA has dual 2-stage PAs optimized for operations at high and low power levels. The mode of operation is controlled by NMOS switches integrated with the SiGe HBT PA. The PA shows a power added efficiency (PAE) of 28.3% and an adjacent channel leakage ration (ACLR) of -30.5dBc at the output power of 26dBm. At the low Pout of 16dBm, the PA shows a PAE of 15.8% and an ACLR of -29.7dBc. The PA shows substantially improved efficiency at low power mode operation.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Long Term Evolution; MOS integrated circuits; bipolar integrated circuits; power amplifiers; BiCMOS; HBT; LTE; Long Term Evolution; NMOS switches; SiGe; adjacent channel leakage ration; frequency 835 MHz; heterojunction bipolar transistors; integrated mode control switches; mode switching power amplifier; power added efficiency; BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Power amplifiers; Silicon germanium; Switches; SiGe power amplifier (PA); long-term evolution (LTE); mode switching;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489458
