Submillimeter-wave InP HEMT amplifiers with current-reuse topology

Author

Sato, Mitsuhisa ; Shiba, S. ; Matsumura, Hiroshi ; Takahashi, Tatsuro ; Suzuki, Takumi ; Nakasha, Yasuhiro ; Hara, Naoya

Author_Institution

Fujitsu Ltd., Atsugi, Japan

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

150

Lastpage

152

Abstract

This paper describes the use of InP HEMT technology to develop sub millimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a -3 dB bandwidth of 89 GHz between 105 and 194 GHz. The other is a G-band amplifier that achieves a small signal gain of 10 dB at 200 GHz and a -3 dB bandwidth of 80 GHz between 130 and more than 220 GHz. These results demonstrate the design methodology is one of the best candidates for developing submillimeter-wave amplifiers.

Keywords

high electron mobility transistors; indium compounds; inductors; submillimetre wave amplifiers; D-band amplifier; G-band amplifier; InP; bandwidth 160 MHz; bandwidth 200 GHz; bandwidth 80 GHz; bandwidth 89 GHz; common-gate amplifiers; current-reuse topology; series inductors; submillimeter-wave InP HEMT amplifiers; submillimeter-wave amplifier circuits; Bandwidth; Gain; HEMTs; Indium phosphide; Inductors; Logic gates; Power demand; D-band; G-band; HEMT; common-gate amplifier; current reuse topology; low noise amplifier; spiral inductor; thin film microstrip line;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489462

Filename

6489462