Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes

Author

Bava, E. ; Beverini, N. ; Carelli, G. ; De Michele, A. ; Galzerano, G. ; Maccioni, E. ; Moretti, A. ; Prevedelli, M. ; Sorrentino, E. ; Svelto, C.

Author_Institution

Dept. of Elettronica e Informazione, Politecnico di Milano, Italy

Volume

3

fYear

2004

fDate

18-20 May 2004

Firstpage

2338

Abstract

We tested the performance of metal-semiconductor point-contact diodes as mixers in the near infrared region. We performed preliminary experiments in order to phase-lock two diode laser at 850 nm some hundred GHz apart. We used GaSb, InAs and InSb as semiconductor layer. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1 GHz oscillator.

Keywords

III-V semiconductors; gallium compounds; indium compounds; optical frequency conversion; optical phase locked loops; point contacts; semiconductor diodes; semiconductor lasers; semiconductor-metal boundaries; 850 nm; GaSb; InAs; InSb; diode laser phase-locking; frequency bridge; frequency down-conversion; metal-semiconductor point-contact diodes; near infrared frequency mixing; optical phase-locked loop; phase-frequency detector; Conductors; Diode lasers; Frequency measurement; Optical mixing; Physics; Radiation detectors; Schottky diodes; Semiconductor diodes; Surface acoustic waves; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE

ISSN

1091-5281

Print_ISBN

0-7803-8248-X

Type

conf

DOI

10.1109/IMTC.2004.1351561

Filename

1351561