A low-voltage high-speed BiCMOS current switch with enhanced-spectral performance

Author

Baek, Kwang-Hyun ; Choe, Myung-Jun ; Kang, Sung-Mo

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

5

fYear

2002

fDate

2002

Abstract

This paper presents a low-voltage high-speed SiGe BiCMOS current switch. Because the proposed current switch has no resistor unlike the previous BiCMOS current switches, it can be used for low voltage ICs. It enhances spectral performance significantly by alleviating nonlinear parasitic capacitance effect, while keeping high-speed and output current accuracy. Simulation result shows that spurious free dynamic range (SFDR) improvement of 10dB is achieved in 12-bit 1GS/s current-mode D/A converter.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; current-mode circuits; digital-analogue conversion; high-speed integrated circuits; integrated circuit design; low-power electronics; semiconductor materials; switching circuits; 12 bit; SiGe; current-mode D/A converter; enhanced-spectral performance; high-speed BiCMOS current switch; low-voltage current switch; nonlinear parasitic capacitance effect; output current accuracy; spectral performance; spurious free dynamic range; BiCMOS integrated circuits; Circuit simulation; Germanium silicon alloys; Low voltage; MOSFETs; Parasitic capacitance; Resistors; Silicon germanium; Switches; Telecommunication switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on

Print_ISBN

0-7803-7448-7

Type

conf

DOI

10.1109/ISCAS.2002.1010638

Filename

1010638