Title :
A low-voltage high-speed BiCMOS current switch with enhanced-spectral performance
Author :
Baek, Kwang-Hyun ; Choe, Myung-Jun ; Kang, Sung-Mo
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
This paper presents a low-voltage high-speed SiGe BiCMOS current switch. Because the proposed current switch has no resistor unlike the previous BiCMOS current switches, it can be used for low voltage ICs. It enhances spectral performance significantly by alleviating nonlinear parasitic capacitance effect, while keeping high-speed and output current accuracy. Simulation result shows that spurious free dynamic range (SFDR) improvement of 10dB is achieved in 12-bit 1GS/s current-mode D/A converter.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; current-mode circuits; digital-analogue conversion; high-speed integrated circuits; integrated circuit design; low-power electronics; semiconductor materials; switching circuits; 12 bit; SiGe; current-mode D/A converter; enhanced-spectral performance; high-speed BiCMOS current switch; low-voltage current switch; nonlinear parasitic capacitance effect; output current accuracy; spectral performance; spurious free dynamic range; BiCMOS integrated circuits; Circuit simulation; Germanium silicon alloys; Low voltage; MOSFETs; Parasitic capacitance; Resistors; Silicon germanium; Switches; Telecommunication switching;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010638
