A new methodology for the statistical analysis of VLSI CMOS circuits and its application to flash memories

Author

Conti, M. ; Crippa, P. ; Orcioni, S. ; Pesare, M. ; Turchetti, C. ; Vendrame, L. ; Lucherin, S.

Author_Institution

Dipt. di Elettronica e Autom., Ancona Univ., Italy

Volume

5

fYear

2002

fDate

2002

Abstract

In this paper a new CAD methodology for the statistical analysis of VLSI CMOS circuits is presented. A novel very accurate position-dependent mismatch model has been implemented into a complete CAD tool. The tool is fully integrated in an environment of commercial tools and it has been experimented on in the Flash Memory CAD Group in STMicroelectronics. As an example of application, a bandgap test circuit has been considered and the results have been compared with experimental data. This methodology has also been applied to the read path of a complex flash memory produced by STMicroelectronics, consisting of about 16,000 MOSFETs. Measurements of electrical performances have confirmed the accuracy of the proposed simulation flow and models.

Keywords

CMOS memory circuits; VLSI; circuit CAD; circuit simulation; flash memories; integrated circuit design; integrated circuit modelling; statistical analysis; CMOS; Flash Memory CAD Group; MOSFETs; STMicroelectronics; VLSI; bandgap test circuit; flash memories; position-dependent mismatch model; read path; simulation flow; statistical analysis; CMOS memory circuits; Circuit testing; Electric variables measurement; Flash memory; Fluid flow measurement; MOSFETs; Photonic band gap; Semiconductor device modeling; Statistical analysis; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on

Print_ISBN

0-7803-7448-7

Type

conf

DOI

10.1109/ISCAS.2002.1010647

Filename

1010647