Title :
Dielectric anti-reflection coating application in a 0.175 μm dual-damascene process
Author :
Lee, G.Y. ; Lu, Z.G. ; Dobuzinsky, D.M. ; Ning, X.J. ; Costrini, G.
Author_Institution :
IBM Semicond. Res. & Dev. Center, Siemens Microelectron. Inc., Hopewell Junction, NY, USA
Abstract :
Various dielectric anti-reflection coatings (DARCs) were evaluated using 0.175 μm dual-damascene structures to examine the lithography process window and integration capability. Double-DARC layers have been developed with the optimum refractive indices and thickness, based on reflectance simulations and measurements, to provide better critical dimension (CD) control as compared to organic ARC and single-DARC layer applications. The integration scheme using a double-DARC layer provides substantial benefit for 0.175 μm metallization
Keywords :
antireflection coatings; dielectric thin films; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit yield; photolithography; reflectivity; refractive index; size control; 0.175 micron; CD control; DARCs; critical dimension control; dielectric anti-reflection coating application; dielectric anti-reflection coatings; double-DARC layer; double-DARC layers; dual-damascene process; dual-damascene structures; integration capability; lithography process window; metallization; optimum refractive index; optimum thickness; organic ARC; reflectance measurements; reflectance simulations; single-DARC layer; Coatings; Dielectric measurements; Etching; Lithography; Pollution measurement; Reflectivity; Refractive index; Resists; Silicon; Substrates;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704759
