DocumentCode :
1810655
Title :
TiO2 memristor devices
Author :
Yakopcic, Chris ; Sarangan, Andrew ; Gao, Jian ; Taha, Tarek M. ; Subramanyam, Guru ; Rogers, Stanley
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Dayton, Dayton, OH, USA
fYear :
2011
fDate :
20-22 July 2011
Firstpage :
101
Lastpage :
104
Abstract :
This paper presents the fabrication technique and results obtained for a titanium oxide based memristor design. A memristor wafer was developed that contains isolated devices as well as small memristor crossbar arrays (36 devices). The current-voltage relationship of the devices shows a memristive switching effect that is more apparent when the devices are negatively biased.
Keywords :
memristors; titanium compounds; TiO2; crossbar arrays; current-voltage relationship; fabrication technique; memristor devices; memristor wafer; Conductivity; Materials; Memristors; Resistance; Switches; Titanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Aerospace and Electronics Conference (NAECON), Proceedings of the 2011 IEEE National
Conference_Location :
Dayton, OH
ISSN :
0547-3578
Print_ISBN :
978-1-4577-1040-7
Type :
conf
DOI :
10.1109/NAECON.2011.6183085
Filename :
6183085
Link To Document :
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