DocumentCode :
1810808
Title :
Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films
Author :
Joshi, Manoj ; Singh, Sunil ; Swain, Bibhu ; Patil, Samadhan ; Dusane, Rajiv ; Rao, Ramgopal ; Mukherji, Soumyo
Author_Institution :
Sch. of Biosci. & Bioeng., Indian Inst. of Technol., Mumbai, India
fYear :
2004
fDate :
20-22 Dec. 2004
Firstpage :
538
Lastpage :
541
Abstract :
Hotwire CVD (HWCVD) deposited silicon rich nitride films were treated with O2 plasma using RF plasma setup. The thickness of this oxynitride film was measured using spectroscopic ellipsometry. The film was treated with [3-(2-aminoethyl) aminopropyl]-trimethoxysilane (AEAPS) followed by immobilization of human immunoglobulin (HIgG) on it. Surface morphology at various stages of experimentation was studied using AFM. Antibody immobilized surface is further investigated using fluorescence microscopy.
Keywords :
atomic force microscopy; biochemistry; dielectric thin films; ellipsometry; fluorescence spectroscopy; molecular biophysics; plasma CVD coatings; silicon; surface morphology; AFM; HIgG; HWCVD; RF plasma; Si; anhydrous silanization; antibody immobilized surface; fluorescence microscopy; hotwire CVD; human immunoglobulin; oxynitride film; silicon nitride film; spectroscopic ellipsometry; surface morphology; Ellipsometry; Humans; Plasma measurements; Radio frequency; Semiconductor films; Silicon; Spectroscopy; Surface morphology; Surface treatment; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
India Annual Conference, 2004. Proceedings of the IEEE INDICON 2004. First
Print_ISBN :
0-7803-8909-3
Type :
conf
DOI :
10.1109/INDICO.2004.1497814
Filename :
1497814
Link To Document :
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