Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films

Author

Joshi, Manoj ; Singh, Sunil ; Swain, Bibhu ; Patil, Samadhan ; Dusane, Rajiv ; Rao, Ramgopal ; Mukherji, Soumyo

Author_Institution

Sch. of Biosci. & Bioeng., Indian Inst. of Technol., Mumbai, India

fYear

2004

fDate

20-22 Dec. 2004

Firstpage

538

Lastpage

541

Abstract

Hotwire CVD (HWCVD) deposited silicon rich nitride films were treated with O₂ plasma using RF plasma setup. The thickness of this oxynitride film was measured using spectroscopic ellipsometry. The film was treated with [3-(2-aminoethyl) aminopropyl]-trimethoxysilane (AEAPS) followed by immobilization of human immunoglobulin (HIgG) on it. Surface morphology at various stages of experimentation was studied using AFM. Antibody immobilized surface is further investigated using fluorescence microscopy.

Keywords

atomic force microscopy; biochemistry; dielectric thin films; ellipsometry; fluorescence spectroscopy; molecular biophysics; plasma CVD coatings; silicon; surface morphology; AFM; HIgG; HWCVD; RF plasma; Si; anhydrous silanization; antibody immobilized surface; fluorescence microscopy; hotwire CVD; human immunoglobulin; oxynitride film; silicon nitride film; spectroscopic ellipsometry; surface morphology; Ellipsometry; Humans; Plasma measurements; Radio frequency; Semiconductor films; Silicon; Spectroscopy; Surface morphology; Surface treatment; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

India Annual Conference, 2004. Proceedings of the IEEE INDICON 2004. First

Print_ISBN

0-7803-8909-3

Type

conf

DOI

10.1109/INDICO.2004.1497814

Filename

1497814