Title :
A 110 nA pacemaker sensing channel in CMOS on silicon-on-insulator
Author :
Silveira, Fernando ; Flandre, Denis
Author_Institution :
Inst. de Ing. Electrica, Univ. de la Republica, Montevideo, Uruguay
Abstract :
The design of a sensing channel for implantable cardiac pacemakers in CMOS on silicon-on-insulator (SOI) technology is presented. The total current consumption is lowered to only 110nA thanks to the optimization at the architectural level, the application of a new class AB design approach at the operational transconductance amplifier (OTA) and the exploitation of the improved characteristics of thin-film fully depleted SOI CMOS technology. The core of the prototyped sense channel (OTA and comparator) occupies 0.06mm2 in a 3μm technology and is suitable for operation from implantable grade batteries with power supply voltages from 2.8V down to 2V. Experimental results of the building blocks and complete sensing channel performance are presented. The achieved results demonstrate the benefits of fully depleted SOI CMOS technology for micropower applications.
Keywords :
CMOS analogue integrated circuits; low-power electronics; pacemakers; silicon-on-insulator; 110 nA; 2.8 to 2 V; 3 micron; CMOS; class AB design approach; implantable cardiac pacemakers; implantable grade batteries; micropower applications; pacemaker sensing channel; silicon-on-insulator; thin-film fully depleted SOI CMOS; total current consumption; Batteries; CMOS technology; Design optimization; Operational amplifiers; Pacemakers; Power supplies; Prototypes; Silicon on insulator technology; Transconductance; Transistors;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010670
