Title :
A compact analytical model for a Gaussian doped nanoscale MOSFET and evidence for diminished short channel effects
Author :
Datta, Deepanjan ; Dasgupta, S.
Author_Institution :
Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
Abstract :
An analytically compact threshold voltage model of nanoscale MOSFET is developed, where various phenomena governing short channel effect (SCEs) has been considered. The threshold voltage variation and the channel potential have also been estimated. It is seen that the SCEs become less prominent as the channel lengths decrease in the nanoscale regime.
Keywords :
MOSFET; nanotechnology; semiconductor device models; semiconductor doping; surface potential; Gaussian doped nanoscale MOSFET; channel potential estimation; compact analytical model; diminished SCE; metal-oxide-semiconductor-field-effect-transistor; short channel effect; threshold voltage; Analytical models; Boundary conditions; DH-HEMTs; Differential equations; Distributed computing; Doping profiles; Implants; MOSFET circuits; Poisson equations; Threshold voltage;
Conference_Titel :
India Annual Conference, 2004. Proceedings of the IEEE INDICON 2004. First
Print_ISBN :
0-7803-8909-3
DOI :
10.1109/INDICO.2004.1497819
