Title :
2006 ROCS Workshop
Abstract :
The following topics are dealt with: reliability in emerging GaN technologies; HEMT reliability; and HBT reliability
Keywords :
heterojunction bipolar transistors; high electron mobility transistors; semiconductor device reliability; HBT; HEMT; heterojunction bipolar transistor; high electron mobility transistor; semiconductor device reliability;
Conference_Titel :
ROCS Workshop, 2006. [Reliability of Compound Semiconductors]
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7908-0113-2
DOI :
10.1109/ROCS.2006.323393
