GaN-On-Si Reliability: A Comparative Study Between Process Platforms

Author

Singhal, S. ; Chaudhari, A. ; Hanson, A.W. ; John, J.W. ; Therrien, R. ; Rajagopal, P. ; Li, T. ; Park, C. ; Edwards, A.P. ; Piner, E.L. ; Kizilyalli, I.C. ; Linthicum, K.J.

Author_Institution

Nitronex Corp., Raleigh, NC

fYear

2006

fDate

Nov. 2006

Firstpage

21

Lastpage

24

Abstract

GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compared with the previous generation of technology and reveal improved results. Highlights include an increase in the activation energy from 1.7eV to 2.0eV and a 50% reduction in the 20-year drift rate as predicted by DC-HTOL testing

Keywords

III-V semiconductors; life testing; semiconductor device reliability; semiconductor device testing; semiconductor technology; transistors; wide band gap semiconductors; 1.7 to 2.0 eV; DC-HTOL; GaN-Si; GaN-on-Si transistor reliability; RF-HTOL; drift characteristics; high temperature operation; process platforms; reliability tests; three-temperature DC test; Annealing; Ceramics; Packaging; Performance evaluation; Qualifications; Radio frequency; Temperature; Testing; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2006. [Reliability of Compound Semiconductors]

Conference_Location

San Antonio, TX

Print_ISBN

0-7908-0113-2

Type

conf

DOI

10.1109/ROCS.2006.323391

Filename

4118077