Title :
A new method to grow III–V crystals from melt in travelling magnetic fields
Author :
Rudolph, P. ; Frank-Rotsch, Ch ; Lux, B. ; Jockel, D. ; Kiessling, F.M. ; Czupalla, M.
Author_Institution :
Leibniz Inst. for Crystal Growth (IKZ), Berlin
Abstract :
First results of a new crystal growth technology of III-V-compounds and Ge is presented. To damp the convection instabilities in the melt and to control the interface shape travelling magnetic fields and temperature are simultaneously generated within a heater-magnet module.
Keywords :
III-V semiconductors; convection; crystal growth from melt; elemental semiconductors; flow instability; gallium arsenide; germanium; semiconductor growth; GaAs; Ge; III-V-compounds; convection instabilities; crystal growth; heater-magnet module; interface shape; melt; travelling magnetic fields; Coils; Crystals; Gallium arsenide; III-V semiconductor materials; Magnetic field measurement; Magnetic fields; Magnetic shielding; Shape control; Temperature control; Toroidal magnetic fields; convection; crystal growth; magnetic field;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702896
