Title :
Crystal growth of compound semiconductors with low dislocation densities
Author :
Friedrich, Jochen ; Kallinger, Birgit ; Knoke, Isabel ; Berwian, Patrick ; Meissner, Elke
Author_Institution :
Dept. Crystal Growth, Fraunhofer IISB, Erlangen
Abstract :
This paper will highlight some technological developments in the field of Vertical Gradient Freeze growth of InP and GaAs for providing substrates with low dislocation densities. Furthermore, the role of micropipes and basal plane dislocations during sublimation and epitaxial growth of SiC will be addressed. Finally, different strategies will be illustrated to achieve GaN with high structural perfection.
Keywords :
III-V semiconductors; crystal growth from vapour; dislocation density; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; silicon compounds; wide band gap semiconductors; GaAs; GaN; InP; SiC; basal plane dislocations; compound semiconductors; crystal growth; dislocation densities; epitaxial growth; micropipes; structural perfection; sublimation; vertical gradient freeze growth; Crystals; Epitaxial growth; Gallium arsenide; Gallium nitride; Indium phosphide; Magnetic fields; Shape control; Silicon carbide; Substrates; Thermal stresses; GaAs; GaN; InP; SiC; VGF; dislocations; epitaxy; solution growth; sublimation growth;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702897
