DocumentCode
1811311
Title
Analysis and modeling of IPD for spiral inductor on glass substrate
Author
Su, Shiuan-Ming ; Wu, Sung-Mao ; Lai, Chi-Chang ; Tai, Yu-Che ; Lin, Wang-Yu ; Guan, Sheng-Wei
Author_Institution
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung
Volume
3
fYear
2008
fDate
21-24 April 2008
Firstpage
1274
Lastpage
1277
Abstract
Fabrication and structure of a novel IPD (Integrated Passive Device) inductor are presented. In this paper, IPD inductor has been simulated by 3D EM simulator software, HFSS (High Frequency Structure Simulator). Performance of this inductor over 100 MHz to 20 GHz frequency range has been demonstrated on a glass substrate. We obtain higher Q factor (Qmax about 25-40) in electrical simulated analysis. Moreover, we study several important variations (Number of Turn, Space, Width, Radius) in IPD for spiral inductor. The trends of insertion loss, inductance value and Q factor have been investigated and summarized for IPD database. Finally, an equivalent circuit model has been presented and optimized by this paper.
Keywords
Q-factor; circuit simulation; electronic engineering computing; equivalent circuits; inductors; passive networks; 3D EM simulator software; IPD inductor; Q factor; equivalent circuit model; glass substrate; high frequency structure simulator; integrated passive device; spiral inductor; Analytical models; Circuit simulation; Fabrication; Frequency; Glass; Inductance; Inductors; Insertion loss; Q factor; Spirals; Equivalent Circuit; IPD; Passives; Q factor; Spiral Inductor;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-1879-4
Electronic_ISBN
978-1-4244-1880-0
Type
conf
DOI
10.1109/ICMMT.2008.4540666
Filename
4540666
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