Title :
Fabrication of In0.52Al0.48As/In0.53Ga0.47As p-HEMT utilizing Ne-based atomic layer etching
Author :
Tae-Woo Kim ; Seung Heon Shin ; Park, Sang Duk ; Yeom, Geun Young ; Jang, Jae-Hyung ; Song, Jong-In
Author_Institution :
GIST, Center for Distrib. sensor network, Gwangju
Abstract :
The characteristics of 0.15 mum In0.52Al0.48As/In0.53Ga0.47As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using the ALET exhibited improved device performance including trasconductance (GM = 1.38 S/mm), ION/IOFF ratio (1.18 times 104), and cutoff frequency (fT = 233 GHz), mainly due to the extremely low plasma-induced damage of the ALET to the Schottky gate area.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; sputter etching; In0.52Al0.48As-In0.53Ga0.47As; Schottky gate area; atomic layer etching; cutoff frequency; electrical conductivity 1.38 S/mm; frequency 233 GHz; plasma-induced damage; pseudomorphic high electron mobility transistors; reactive ion etching; trasconductance; Atomic layer deposition; Fabrication; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Materials science and technology; Plasma applications; Surface morphology; Wet etching; Atomic layer etching (ALET); ION/IOFF ratio; peudomorphic high electron mobility transistor (p-HEMT);
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702898
