A 2.8V RWDM BTL Class-D power amplifier using an FGMOS comparator

Author

Nandhasri, K. ; Ngarmnil, J. ; Moolpho, K.

Author_Institution

Dept. of Electron. Eng., Mahanakorn Univ. of Technol., Bangkok, Thailand

Volume

5

fYear

2002

fDate

2002

Abstract

This paper presents a design of an output stage based on Class-D amplifier techniques using rectangular wave delta modulation (RWDM) topology. This amplifier has a simple structure comprised only of a hysteresis comparator and output drivers. Thanks to the use of a multiple-input hysteresis comparator using floating-gate MOSFETs, the amplifier is capable of low voltage operation. On Alcatel 0.5 μm double poly CMOS process, this amplifier demonstrated up to 0.88W with 95% efficiency with a 2.8V power supply. This means implementation as a monolithic chip is possible, making this amplifier suitable for portable applications such as speaker driving circuits in mobile phones, hearing aids and other implantable medical devices.

Keywords

CMOS analogue integrated circuits; audio-frequency amplifiers; comparators (circuits); delta modulation; driver circuits; low-power electronics; power amplifiers; 0.5 micron; 0.88 W; 2.8 V; 95 percent; Alcatel double poly CMOS process; FGMOS comparator; RWDM BTL Class-D power amplifier; bridge tied load; hysteresis comparator; implantable medical devices; low voltage operation; output drivers; rectangular wave delta modulation; speaker driving circuits; CMOS process; Delta modulation; Driver circuits; Hysteresis; Low voltage; MOSFETs; Operational amplifiers; Power amplifiers; Power supplies; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on

Print_ISBN

0-7803-7448-7

Type

conf

DOI

10.1109/ISCAS.2002.1010690

Filename

1010690