DocumentCode :
1811407
Title :
On-chip current sensing technique for CMOS monolithic switch-mode power converters
Author :
Lee, Cheung Fai ; Mok, Philip K T
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Volume :
5
fYear :
2002
fDate :
2002
Abstract :
An on-chip current sensing technique, which is suitable for monolithic switch-mode power converters, is presented in this paper. This current sensing technique has been fabricated with a standard 0.6 μm CMOS process. Experimental results show that the switching converter can operate from 300 kHz to 1 MHz with the duty-ratio ranging from 0.2 to 1. The supply voltage of this current sensing circuit is from 3 V to 4.2 V, which is suitable for lithium ion battery applications. The discrepancy between the sensed signal and the inductor current is less than 4%, corresponding to 10 mA with load current 300 mA.
Keywords :
CMOS analogue integrated circuits; DC-DC power convertors; power integrated circuits; switched mode power supplies; 0.6 micron; 10 mA; 3 to 4.2 V; 300 kHz to 1 MHz; 300 mA; CMOS; DC DC power convertors; duty-ratio; inductor current; lithium ion battery applications; load current; monolithic switch-mode power converters; on-chip current sensing technique; supply voltage; Batteries; CMOS technology; Circuits; Consumer electronics; Inductors; Power dissipation; Power transistors; Resistors; Switching converters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
Type :
conf
DOI :
10.1109/ISCAS.2002.1010691
Filename :
1010691
Link To Document :
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