Title :
Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers
Author :
Saint-Girons, G. ; Regreny, P. ; Cheng, Jun ; Hollinger, Guy ; Largeau, L. ; Patriarche, G.
Author_Institution :
Ecole Centrale de Lyon, Univ. de Lyon, Ecully
Abstract :
A new approach of monolithic integration of InP based heterostructures on silicon is proposed, based on the plastic compliant behavior of the InP/Gd2O3(111) heterointerface. When grown on a crystalline Gd2O3/Si(111) buffer, InP takes its bulk lattice parameter as soon as the growth begins, allowing the monolithic growth of good quality InAsP/InP heterostructures on Si, as attested by room-temperature photoluminescence experiments.
Keywords :
III-V semiconductors; buffer layers; gadolinium compounds; indium compounds; lattice constants; molecular beam epitaxial growth; photoluminescence; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum wells; silicon; InAsP-InP-Gd2O3-Si; InP based heterostructure; InP-Gd2O3; bulk lattice parameter; crystalline buffer layers; monolithic integration; plastic compliant behavior; room-temperature photoluminescence; silicon; temperature 293 K to 298 K; Crystalline materials; Crystallization; Diffraction; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Lattices; Molecular beam epitaxial growth; Monolithic integrated circuits; Silicon; Crystalline oxides; III–V; TEM; epitaxy; monolithic integration;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702902
