Differential absorption spectroscopy for vertically coupled InGaAs quantum dots of p-type modulation doping

Author

Chuang, K.Y. ; Feng, David J. ; Chen, C.Y. ; Tzeng, T.E. ; Lay, T.S.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ.

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

We report the differential absorption (Deltaalpha) spectra of the vertically coupled triple-layer InGaAs quantum dots (QDs) at different reverse bias. The results show that the decrease of spacer layer thickness increases the differential absorption. Adding p-type modulation doping further increases the differential absorption amplitude at ground state.

Keywords

III-V semiconductors; electroluminescence; gallium arsenide; ground states; indium compounds; photoluminescence; semiconductor doping; semiconductor quantum dots; InGaAs; differential absorption spectra; electroluminescence; ground state; p-type modulation doping; photoluminescence; spacer layer thickness; vertically coupled triple-layer quantum dots; Absorption; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Pulse measurements; Quantum dot lasers; Quantum dots; Spectroscopy; Stationary state; different absorption; modulation doping; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702903

Filename

4702903