Single growth platform for integration of tuneable laser and semiconductor optical amplifier

Author

Engelstaedter, J.P. ; Roycroft, Brendan ; Peters, Frank H. ; Corbett, Brian ; Guo, Wei-Hua ; Byrne, Diarmuid ; Lu, Qiao-Yin ; Donegan, John F.

Author_Institution

Centre for Telecommun. Value-Driven Res., Univ. Coll. Cork, Cork

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

A single-growth wavelength tuneable laser diode integrated with a semiconductor optical amplifier (SOA) is presented. Fabrication of the device uses only standard lithography. The single mode device exhibits a maximum side mode suppression ratio of 40 dB and optical output power in excess of 14 dBm.

Keywords

lithography; semiconductor optical amplifiers; lithography; optical output power; semiconductor optical amplifier; side mode suppression ratio; single growth platform; single-growth wavelength tuneable laser diode; Diode lasers; Laser modes; Laser tuning; Lithography; Optical device fabrication; Optical devices; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Tunable circuits and devices; SOA; photonic integrated circuits; single growth integration platform; tuneable laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702904

Filename

4702904