Title :
Low temperature processing of conformal TiN by ACVD (advanced chemical vapor deposition) for multilevel metallization in high density ULSI devices
Author :
Kang, Sang Bom ; Chae, Yun Sook ; Yoon, Mee Young ; Leem, Hyeun Seog ; Park, Chang Soo ; Lee, Sang In ; Lee, Moon Yong
Author_Institution :
Semicond. R&D Center, Samsung Electron., Yongin-City, South Korea
Abstract :
A novel method for low temperature deposition of conformal TiN is reported. ACVD (advanced chemical vapor deposition) is a TiCl4-based TiN deposition process which relies on the surface reactions of the adsorbed precursors. With this technique, conformal TiN films with resistivity as low as 130 μΩ-cm can be deposited at a deposition temperature of 500°C and below. The results from the integration of ACVD-TiN with Si contacts and vias in high density devices indicate that ACVD-TiN is applicable to all levels of multilevel metallization for the next generation of ULSI devices
Keywords :
ULSI; chemical interdiffusion; chemical vapour deposition; conformal coatings; diffusion barriers; electrical resistivity; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; surface chemistry; titanium compounds; 130 muohmcm; 500 C; ACVD; ACVD-TiN integration; Si contacts; TiCl4; TiCl4-based TiN deposition process; TiN; ULSI devices; adsorbed precursors; advanced chemical vapor deposition; conformal TiN; conformal TiN films; deposition temperature; high density ULSI devices; low temperature deposition; low temperature processing; multilevel metallization; resistivity; surface reactions; vias; Artificial intelligence; Chemical vapor deposition; Conductivity; Electrodes; Metallization; Moon; Sputtering; Temperature; Tin; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704763
