Title :
340nm blue-shift in InGaAs/InAlAs quantum dots processed by SiO2 sputtering and rapid thermal annealing
Author :
Hsu, T.C. ; Tzeng, T.E. ; Lin, E.Y. ; Chuang, K.Y. ; Chiu, C.L. ; Lay, T.S.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
The atomic intermixing effects on emission wavelength blue-shift for self-assembled InGaAs/InAlAs quantum dots on InP substrate were investigated. A large blue-shift upto 343 nm, from lambda=1632 nm to 1289 nm, was obtained by SiO2 sputtering deposition and rapid thermal annealing at 800degC.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; rapid thermal annealing; self-assembly; semiconductor growth; semiconductor quantum dots; spectral line shift; sputter deposition; InGaAs-InAlAs; atomic intermixing; blue shift; rapid thermal annealing; self-assembled quantum dots; sputtering deposition; temperature 800 degC; Annealing; Atomic layer deposition; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Plasma temperature; Quantum dots; Sputtering; Substrates; InP; intermixing; quantum dots;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702906
