Measurement of Infant Mortality Rate in InGaP/GaAs Heterojunction Bipolar Transistor Technology

Author

Alt, K.W. ; Yeats, R.E. ; Hutchinson, C.P. ; Kuhn, D.K. ; Low, T.S. ; Iwamoto, M. ; Adamski, M.E. ; Shimon, R.L. ; Shirley, T.E. ; Bonse, M. ; Kellert, F.G. ; Avanzo, D. C D

Author_Institution

Agilent Technol., Inc., Santa Rosa, CA

fYear

2006

fDate

12-12 Nov. 2006

Firstpage

117

Lastpage

127

Abstract

A novel circuit for measuring the infant mortality rate in InGaP/GaAs HBT technology is presented. The circuit allows reliability stressing to be performed on as many as 100,000 transistors per wafer and is necessary in order to predict the infant circuit failure rate in circuits with >500 transistors. This new circuit allows for the identification of failed transistors and subsequent failure analysis to allow for process improvements. Results show that substrate dislocations are the leading cause of infant mortality

Keywords

III-V semiconductors; bipolar integrated circuits; failure analysis; gallium arsenide; indium compounds; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; semiconductor technology; wide band gap semiconductors; HBT technology; InGaP-GaAs; failed transistor identification; heterojunction bipolar transistor; infant circuit failure; substrate dislocations; Circuit testing; Degradation; Failure analysis; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit reliability; Integrated circuit technology; Integrated circuit testing; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2006. [Reliability of Compound Semiconductors]

Conference_Location

San Antonio, TX

Print_ISBN

0-7908-0113-2

Type

conf

DOI

10.1109/ROCS.2006.323410

Filename

4118088