Multiple lasing lines from deep-etched photonic crystal of asymmetric muliple quantum wells

Author

Bai, J.C. ; Chiu, C.L. ; Hsin, J.Y. ; Chen, C.Y. ; Lay, T.S.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ.

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

A slab photonic crystal (PhC) laser was fabricated on InP substrate. The wafer consists of p-i-n laser epitaxial structure with asymmetric InGaAs/InGaAlAs multiple quantum wells. The deep-etched PhC laser of 2.76 mum-thick was achieved by ICP-RIE dry etching process using Cl₂+SiCl₄+CH₄ mixture. Lasing spectrum shows three lasing modes at lambda = 1505, 1535, and 1551 nm, respectively.

Keywords

aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; photonic crystals; quantum well lasers; semiconductor quantum wells; slabs; sputter etching; ICP-RIE dry etching; InGaAs-InGaAlAs; InP; asymmetric multiple quantum wells; lasing modes; lasing spectrum; multiple lasing lines; p-i-n laser epitaxial structure; size 2.76 mum; slab photonic crystal laser; wavelength 1505 nm; wavelength 1535 nm; wavelength 1551 nm; Biomembranes; Chromium; Dry etching; Indium phosphide; Laser modes; Lasers and electrooptics; Optical losses; Photonic crystals; Quantum well lasers; Substrates; laser; multiple quantum wells; photonic crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702907

Filename

4702907