Title :
Multiple lasing lines from deep-etched photonic crystal of asymmetric muliple quantum wells
Author :
Bai, J.C. ; Chiu, C.L. ; Hsin, J.Y. ; Chen, C.Y. ; Lay, T.S.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ.
Abstract :
A slab photonic crystal (PhC) laser was fabricated on InP substrate. The wafer consists of p-i-n laser epitaxial structure with asymmetric InGaAs/InGaAlAs multiple quantum wells. The deep-etched PhC laser of 2.76 mum-thick was achieved by ICP-RIE dry etching process using Cl2+SiCl4+CH4 mixture. Lasing spectrum shows three lasing modes at lambda = 1505, 1535, and 1551 nm, respectively.
Keywords :
aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; photonic crystals; quantum well lasers; semiconductor quantum wells; slabs; sputter etching; ICP-RIE dry etching; InGaAs-InGaAlAs; InP; asymmetric multiple quantum wells; lasing modes; lasing spectrum; multiple lasing lines; p-i-n laser epitaxial structure; size 2.76 mum; slab photonic crystal laser; wavelength 1505 nm; wavelength 1535 nm; wavelength 1551 nm; Biomembranes; Chromium; Dry etching; Indium phosphide; Laser modes; Lasers and electrooptics; Optical losses; Photonic crystals; Quantum well lasers; Substrates; laser; multiple quantum wells; photonic crystal;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702907
