Title :
InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxy
Author :
Michon, A. ; Hostein, R. ; Patriarche, G. ; Beaudoin, G. ; Gogneau, N. ; Beveratos, A. ; Robert-Philip, I. ; Sagnes, I. ; Laurent, S. ; Sauvage, S. ; Boucaud, P.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis
Abstract :
This contribution reports the growth of InAsP quantum dots on InP(001) using metalorganic vapor phase epitaxy. We show that the control of the voluntary phosphorus incorporation into the quantum dots allows both to tune their emission to 1.55 mum and to improve their optical properties.
Keywords :
III-V semiconductors; MOCVD; indium compounds; phosphorus; photoluminescence; semiconductor doping; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAsP-InP; emission wavelength; metalorganic vapor phase epitaxy; optical properties; quantum dots; structural properties; wavelength 1.55 mum; Alloying; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Infrared detectors; Infrared spectra; Lattices; Quantum dots; Substrates; 1.55 μm; InAs/InP(001); MOVPE; alloying; quantum dots;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702908
