Title :
Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy
Author :
Michon, A. ; Hostein, R. ; Patriarche, G. ; Beaudoin, G. ; Gogneau, N. ; Beveratos, A. ; Robert-Philip, I. ; Sagnes, I. ; Laurent, S. ; Sauvage, S. ; Boucaud, P.
Author_Institution :
CNRS, Lab. de Photonique et de Nanostruct.
Abstract :
This contribution shows that the control of the cap-layer growth rate of InAs/InP(001) quantum dots grown by metalorganic vapor phase epitaxy allows to control their emission wavelength. By varying the cap-layer growth rate over a factor 12, the emission is tuned between 1.55 and 2 mum.
Keywords :
III-V semiconductors; MOCVD; indium compounds; optical tuning; photoluminescence; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs-InP; cap-layer growth rate; emission wavelength; metalorganic vapor phase epitaxy; photoluminescence; quantum dots; tuning; wavelength 1.55 mum to 2 mum; Epitaxial growth; Epitaxial layers; Gas lasers; Laser tuning; Molecular beam epitaxial growth; Optical control; Quantum dots; Quantum well lasers; Substrates; Temperature; 2 μm; InAs/InP(001); MOVPE; cap-layer growth rate; quantum dots;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702909
