A Simple, Small-Sized Protection Diode Design to Aimprove ESD Survivability on 2μm Ingap HBT Devices

Author

Chou, H.C. ; Chou, Frank ; Chen, C.J. ; Chen, S.C. ; Wu, C.S.

Author_Institution

WIN Semicond. Corp., Tao Yuan Shien

fYear

2006

fDate

12-12 Nov. 2006

Firstpage

139

Lastpage

150

Abstract

ESD is a well-known reliability aspect in Si technologies, but GaAs devices are more susceptible to ESD damage than the silicon devices. In this study, the ESD survivability of the InGaP HBT transistors and the B-C, B-E/C and BE protect diodes was evaluated. After ESD protection circuits on chip level been investigated, the authors then established a simply B-E diode protection circuit with only 10μmx10μm area to improve ESD survivability of the 2-finger 2μmx20μm HBT transistor from 50V to over 2000V.

Keywords

III-V semiconductors; electrostatic discharge; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; semiconductor diodes; wide band gap semiconductors; 10 micron; 2 micron; 20 micron; ESD protection circuits on chip; ESD survivability; HBT devices; InGaP; diode protection circuit; heterojunction bipolar transistor; two finger HBT transistor; Biological system modeling; Circuit testing; Dielectric substrates; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Protection; Semiconductor diodes; Telephone sets; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2006. [Reliability of Compound Semiconductors]

Conference_Location

San Antonio, TX

Print_ISBN

0-7908-0113-2

Type

conf

DOI

10.1109/ROCS.2006.323412

Filename

4118090