Title :
Microwave modeling and parameter extraction method for PHEMT
Author :
Gao, Jianjun ; Li, Xiuping
Author_Institution :
Sch. of Inf. Sci. & Technol., East China Normal Univ., Shanghai
Abstract :
This paper reviews the characterization technique of pseudomorphic high electron mobility transistors (PHEMT). The linear, nonlinear and noise modeling and corresponding parameter extraction methods are described. The on wafer measurement methods for S parameters and noise parameters are also highlighted.
Keywords :
high electron mobility transistors; semiconductor device models; PHEMT; S parameters; microwave modeling; noise parameters; nonlinear noise modeling; parameter extraction; pseudomorphic high electron mobility transistors; wafer measurement; Electron mobility; HEMTs; MODFETs; Microwave theory and techniques; Microwave transistors; Noise measurement; PHEMTs; Parameter extraction; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540682
