A 3-10GHz bandwidth low noise amplifier for ultra-wideband application using SiGe HBT technology

Author

Li Jia ; Zhang Wan-Rong ; Xie Hong-Yun ; Zhang Wei ; He Li-jian ; Shen Pei ; Gan Jun-Ning

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing

Volume

3

fYear

2008

fDate

21-24 April 2008

Firstpage

1330

Lastpage

1333

Abstract

A feedback topology low-noise amplifier (LNA) using advanced SiGe HBT technology for application in ultra-wideband (UWB) systems is presented in this paper. The design consists of single stage topology in two feedback loops to achieve broadband gain together with low noise figure (NF) and good input and output impedance match. Using 0.35 mum SiGe HBT process, the simulated results show 11.9 dB of gain(S₂₁) with 1.7 dB of variation over the 3 GHz to 10 GHz band, and a low NF ranging from 3.6 dB to 3.98 dB while consuming a dc power of only 10 mW. The matched input and output reflectance (S₁₁ and S₂₂) are less than -5 dB and -10 dB respectively. At the same time, LNA is unconditionally stable over the entire band.

Keywords

Ge-Si alloys; bipolar MMIC; heterojunction bipolar transistors; low noise amplifiers; ultra wideband communication; SiGe; SiGe HBT technology; frequency 3 GHz to 10 GHz; gain 11.9 dB; low noise amplifier; power 10 mW; size 0.35 micron; ultrawideband application; Bandwidth; Broadband amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Low-noise amplifiers; Noise measurement; Silicon germanium; Topology; Ultra wideband technology; Low-noise amplifier; SiGe HBT; Ultra-wideband (UWB); feedback;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1879-4

Electronic_ISBN

978-1-4244-1880-0

Type

conf

DOI

10.1109/ICMMT.2008.4540684

Filename

4540684