Barrier/seed layer requirements for copper interconnects

Author

Wong, S. Simon ; Ryu, Changsup ; Lee, Haebum ; Loke, Alvin L S ; Kwon, Kee-Won ; Bhattacharya, Som ; Eaton, Rory ; Faust, Rick ; Mikkola, Bob ; Mucha, Jay ; Ormando, John

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

107

Lastpage

109

Abstract

The microstructure of electroplated Cu is highly dependent on the characteristics of underlying barrier and seed layers. A smooth and strongly textured Cu seed layer is needed to promote the development of highly textured, large grains in the electroplated Cu film, even in damascene structures. This microstructure is desired for extended reliability

Keywords

chemical interdiffusion; copper; diffusion barriers; electroplating; grain size; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; surface texture; Cu; barrier layer; copper interconnects; damascene structures; electroplated Cu film; electroplated Cu microstructure; reliability; seed layer; smooth textured Cu seed layer; textured large grains; Atomic force microscopy; Atomic measurements; Copper; Grain size; Microstructure; Rough surfaces; Surface roughness; Surface texture; Tin; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704764

Filename

704764