Title :
The development and application of novel Ru precursors for atmospheric pressure MOVPE growth of Ru doped current blocking layers
Author :
Dosanjh, S. ; Cannard, P. ; Firth, R. ; Lealman, I. ; Moore, R. ; Rivers, L. ; Robertson, M. ; Rushworth, S. ; Odedra, R. ; Viswanathan, P. ; Sykes, D.E. ; Chew, A.
Author_Institution :
CIP, Ipswich
Abstract :
Ru precursors IPCPRu and IBCPRu have been developed as alternatives to DMRu. Stability trials and atmospheric pressure MOVPE growth investigations have led to their successful application for Ru doped InP current blocking layers in laser devices.
Keywords :
III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; stability; vapour phase epitaxial growth; wide band gap semiconductors; InP:Ru; MOVPE; Ru precursors; atmospheric pressure; current blocking layers; stability; Chemical lasers; Epitaxial growth; Epitaxial layers; Hydrogen; Indium phosphide; Iron; Laser stability; Testing; Thermal degradation; Zinc; MOVPE; Ru doping; component; current blocking; laser;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702915
