Title :
Fabrication of all-optical switch based on intersubband transition in InGaAs/AlAsSb quantum wells with DFB structure
Author :
Nagase, M. ; Akimoto, R. ; Akita, K. ; Kawashima, H. ; Mozume, T. ; Hasama, T. ; Ishikawa, H.
Author_Institution :
Ultrafast Photonic Device Lab., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
All-optical switch based on the intersubband transition in InGaAs/AlAsSb quantum wells with DFB structure was fabricated using deep-etching technology. The sharp transmission spectrum with a difference of more than 13 dB between the stopband and the off-resonant regions was successfully obtained. Furthermore, the applicability of this device to ultrafast optical switches with a switching speed greater than 160 GHz was investigated by considering the relation between the bandwidth of the spectrum and the operating frequency.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; electron beam lithography; etching; gallium compounds; high-speed optical techniques; indium compounds; optical communication equipment; optical fabrication; optical switches; optical waveguides; semiconductor quantum wells; DFB structure; InGaAs-AlAsSb; all-optical switch fabrication; deep-etching technology; electron beam lithography; intersubband transition; optical communication; quantum wells; sharp transmission spectrum; ultrafast optical switches; Absorption; Fabrication; Indium gallium arsenide; Indium phosphide; Multilevel systems; Optical fiber communication; Optical switches; Optical waveguides; Refractive index; Tellurium; All-optical devices; Intersubband transition; Optical communication; Ultrafast device;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702920
