Title :
An ultra-wideband Darlington low noise amplifier design based on SiGe HBT
Author :
Shen Pei ; Zhang Wan-Rong ; Xie Hong-Yun ; Jin Dong-Yue ; Zhang Wei ; Li Jia ; Gan Jun-Ning
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing
Abstract :
A design methodology of Darlington low noise figure (LNA) for application at ultra wide bandwidth using a resistive feedback scheme is proposed. The packaged SiGe heterojunction bipolar transistors (HBTs) BFP740 and chip type passive components were used for this direct-coupled LNA. The Darlington amplifier has high gain of 20 dB with variation of 0.5 dB over 3.1-6 GHz, which is twice of single stage LNA. The typical noise figure is 1.8 dB at 3.1 GHz, 2.9 dB at 6 GHz and the circuit keeps unconditional stable for whole 3.1 GHz-6 GHz frequency band. General design procedures are also given in this paper in order to better understand the roles of the various key issues for the LNA.
Keywords :
Ge-Si alloys; bipolar transistor circuits; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; ultra wideband technology; wideband amplifiers; Darlington low noise figure; HBT; SiGe; UWB low noise amplifier; direct-coupled LNA; frequency 3.1 GHz to 6 GHz; gain 20 dB; heterojunction bipolar transistor; heterojunction bipolar transistors; noise figure 1.8 dB; noise figure 2.9 dB; resistive feedback; ultra wideband Darlington low noise amplifier; Bandwidth; Design methodology; Feedback; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Packaging; Silicon germanium; Ultra wideband technology;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540696
