Title :
High electron mobility InAsSb grown on InP using Sb surfactant
Author :
Liao, Chichih ; Wu, Bing-Ruey ; Cheng, K.Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL
Abstract :
High electron mobility and low defect density InAsSb lattice-matched to AlSb has been successfully grown on InP substrates by gas source molecular beam epitaxy using a Sb surfactant buffer layer structure. High electron mobility transistors based on this heterostructure have been demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; buffer layers; electron mobility; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; surfactants; InAsSb-AlSb; InP; buffer layer structure; defect density; electron mobility; gas source molecular beam epitaxy; heterostructure; high electron mobility transistors; surfactant; Buffer layers; Electron mobility; Epitaxial growth; Gallium arsenide; HEMTs; Indium phosphide; Lattices; MODFETs; Molecular beam epitaxial growth; Substrates; electron mobility; high electron mobility transistor; molecular bean epitaxy; surfactant;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702922
