High electron mobility InAsSb grown on InP using Sb surfactant

Author

Liao, Chichih ; Wu, Bing-Ruey ; Cheng, K.Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

High electron mobility and low defect density InAsSb lattice-matched to AlSb has been successfully grown on InP substrates by gas source molecular beam epitaxy using a Sb surfactant buffer layer structure. High electron mobility transistors based on this heterostructure have been demonstrated.

Keywords

III-V semiconductors; aluminium compounds; arsenic compounds; buffer layers; electron mobility; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; surfactants; InAsSb-AlSb; InP; buffer layer structure; defect density; electron mobility; gas source molecular beam epitaxy; heterostructure; high electron mobility transistors; surfactant; Buffer layers; Electron mobility; Epitaxial growth; Gallium arsenide; HEMTs; Indium phosphide; Lattices; MODFETs; Molecular beam epitaxial growth; Substrates; electron mobility; high electron mobility transistor; molecular bean epitaxy; surfactant;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702922

Filename

4702922