DocumentCode :
1812001
Title :
40 Gbps operation of MOBILE and its application to weighted-sum threshold logic gate using only RTDS
Author :
Kim, Hyungtate ; Park, Myunghwan ; Seo, Kwangseok
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
We have demonstrated a novel and compact implementation of MOnostable-to-BIstable transition Logic Element (MOBILE) using only three resonant tunneling diodes (RTDs). The operation of proposed circuit has been demonstrated up to 40 Gbps. In addition, to demonstrate the functionality and the computational capability of the proposed MOBILE configuration using only RTDs, we have designed a 2-input weighted sum Linear Threshold Gates (LTG) with one threshold and a Multi-Threshold Threshold Gate (MTTG) with two thresholds, using the same circuit configuration. The operations of the proposed threshold logic gates (TLGs) have been demonstrated up to 12.5 Gbps.
Keywords :
logic gates; resonant tunnelling diodes; MOBILE; RTDs; bit rate 40 Gbit/s; monostable-to-blstable transition logic element; multi-threshold threshold gate; resonant tunneling diodes; weighted-sum threshold logic gate; Boolean functions; HEMTs; Logic circuits; Logic design; Logic devices; Logic gates; Low voltage; MODFETs; Mobile computing; Switches; MOBILE; RTD; threshold logic gate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4702923
Filename :
4702923
Link To Document :
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