Title :
Complicated effects of nitrogen on the structural and optical properties of InAs(N)/GaAs quantum dots
Author :
Ma, B.S. ; Fälth, J.F. ; Fan, W.J. ; Yoon, S.F.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
InAs(N)/GaAs quantum dots were studied by x-ray diffraction, photoluminescence (PL) spectra, and atom force microscopy. Complicated blue shift in the PL peak energy with increasing nitrogen concentration was observed. This shift arises from the quantum size effect in the quantum dots, which dominates the nitrogen induced reductions of the InAsN band gap.
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; energy gap; gallium arsenide; indium compounds; nitrogen; photoluminescence; semiconductor doping; semiconductor quantum dots; spectral line shift; InAsN-GaAs; X-ray diffraction; atom force microscopy; band gap; blue shift; photoluminescence; quantum dots; Atom optics; Atomic force microscopy; Gallium arsenide; Nitrogen; Photoluminescence; Plasma measurements; Quantum dots; Radio frequency; X-ray diffraction; X-ray scattering; InAsN; photoluminescence; quantum dots; quantum size effect;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702925
