Title :
Electromigration behaviour of 0.3 μm damascene vs. plasma-etched interconnects: a lifetime and drift analysis
Author :
Proost, J. ; Li, H. ; Brijs, B. ; Witvrouw, A. ; Maex, K.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The electromigration behaviour of 0.3 μm wide Al(Cu) damascene interconnects has been studied both by lifetime testing and drift experiments and results are compared to equivalent plasma-etched lines. The lifetime degradation observed for the damascene implementation is consistent with the relative contribution of incubation time and diffusivity, as extracted from the drift study. This is shown to be an intrinsic effect related to the different nature of the interfaces in both metallization schemes
Keywords :
aluminium alloys; copper alloys; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; interface structure; life testing; sputter etching; 0.3 micron; AlCu; AlCu damascene interconnects; AlCu plasma-etched lines; damascene implementation; damascene interconnects; diffusivity; drift analysis; drift testing; electromigration; incubation time; lifetime analysis; lifetime degradation; lifetime testing; metallization interfaces; metallization schemes; plasma-etched interconnects; Artificial intelligence; Current density; Electromigration; Electron mobility; Inspection; Life testing; Microstructure; Plasmas; Sequential analysis; Stress;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704765
